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State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II
Language: en
Pages: 380

State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II

Authors: Electrochemical Society. Electronics Division
Categories: Technology & Engineering
Type: BOOK - Published: 2002 - Publisher: The Electrochemical Society

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State-of-the-Art Program on Compound Semiconductors XXXVIII and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors III
Language: en
Pages: 292

State-of-the-Art Program on Compound Semiconductors XXXVIII and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors III

Authors: Edward B. Stokes
Categories: Technology & Engineering
Type: BOOK - Published: 2003 - Publisher: The Electrochemical Society

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State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V
Language: en
Pages: 616

State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V

Authors: H. M. Ng
Categories: Technology & Engineering
Type: BOOK - Published: 2004 - Publisher: The Electrochemical Society

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State-of-the-Art Program on Compound Semiconductors XXXVII (SOTAPOCS XXXVII), and Narrow Bandgap Optoelectronic Materials and Devices
Language: en
Pages: 344

State-of-the-Art Program on Compound Semiconductors XXXVII (SOTAPOCS XXXVII), and Narrow Bandgap Optoelectronic Materials and Devices

Authors: P. C. Chang
Categories: Technology & Engineering
Type: BOOK - Published: 2002 - Publisher: The Electrochemical Society

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GaN-based Materials and Devices
Language: en
Pages: 295

GaN-based Materials and Devices

Authors: Michael Shur
Categories: Technology & Engineering
Type: BOOK - Published: 2004 - Publisher: World Scientific

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The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials gro