Relaxation of Radiation Damages in Silicon Planar Detectors
Author | : |
Publisher | : |
Total Pages | : |
Release | : 2005 |
ISBN-10 | : OCLC:68552600 |
ISBN-13 | : |
Rating | : 4/5 (00 Downloads) |
Book excerpt: The behaviour of radiation induced carbon related defects in high resistivity silicon detectors has been investigated. The defects were introduced by [alpha]-particle irradiation and the measurements were carried out by the DLTS-technique. The unusual defect behaviour consists in low temperature annealing, including self annealing at room temperature, of the interstitial carbon C[sub i] with the simultaneous increase of the (C[sub i]-O[sub i])-complex concentration. The kinetic parameters of the process have been determined from the increase of the C[sub i]-centre concentration versus time. Two annealing velocities have been observed, which are due to different heat treatments during the detector fabrication process.