Quantum Dot Intersubband Long-Wavelength Detector Arrays
Author | : |
Publisher | : |
Total Pages | : 0 |
Release | : 2004 |
ISBN-10 | : OCLC:946720441 |
ISBN-13 | : |
Rating | : 4/5 (41 Downloads) |
Book excerpt: In(Ga, Al)As/(Ga, Al)As QDIPs are positioned to become an important technology in the field of IR detection, particularly for the type of high-temperature, low-cost, high-yield detector arrays required for the military and other highly sophisticated applications. This research has advanced the state-of-the-art in QDIP performance, demonstrating that it is reasonable to incorporate these devices into a FPA operating at 150 K for MWIR detection. For example, at this temperature of operation, J(sub dark) 10(exp -5) A/sq cm, R(sub peak) 0.2 - 0.3 A/W and D ̂10 (exp 10) cm. Hz(exp 1/2/W. These improvements have been achieved by investigating several significant areas of QDIP operation to obtain a complete picture of the many different factors that affect detector performance: i) MBE growth of QDs for increased absorption of IR light, ii) design, fabrication, and characterization of state-of-the-art, discrete QDIPs operating at elevated temperatures, and iii) the characterization of small QDIP array properties.