Monolithic Microwave Integrated Circuits Based on Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors
Author | : Valeriy S. Kaper |
Publisher | : |
Total Pages | : 271 |
Release | : 2004 |
ISBN-10 | : 049662072X |
ISBN-13 | : 9780496620722 |
Rating | : 4/5 (2X Downloads) |
Book excerpt: This dissertation describes all stages of AlGaN/GaN HEMT monolithic microwave integrated circuit development. A brief overview of the semiconductor device physics, epitaxial growth and device and circuit fabrication is given. Two chapters of this work are dedicated to a thorough discrete transistor characterization procedure which is critical to the optimization of the transistor fabrication process and all subsequent stages of the integrated circuit design. Linear and non-linear transistor modeling is presented as means of both transistor performance optimization and accurate device representation in the circuit design. Design and analysis of AlGaN/GaN HEMT based MMIC applications: amplifiers, oscillators, switch, mixer and attenuators are presented.