Low Temperature ([150°C) Hydrogenated Amorphous Silicongrown by PECVD with Source Gas Heating
Author | : Richard Barrie Michael Cross |
Publisher | : |
Total Pages | : |
Release | : 2005 |
ISBN-10 | : OCLC:1063527708 |
ISBN-13 | : |
Rating | : 4/5 (08 Downloads) |
Book excerpt: Low temperature ± 150°C) hydrogenated amorphous silicon grown by PECVD with source gas heating Richard Barrie Michael Cross Hydrogenated amorphous silicon (a-Si:H) is a semiconductor that is widely used in a variety of applications. A particularly important development has been the incorporation of this material into thin film transistor (TFT) arrays for the active matrix addressing of liquid crystal displays. Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the most successful techniques currently in use for the deposition of device quality a-Si:H. However, there is an increasing desire to improve process compatibility with low cost, plastic substrates. This entails trying to reduce the deposition temperature from approximately 250 - 300°C to below 150 °C, whilst maintaining material quality. This thesis describes the design of a novel, low temperature PECVD system incorporating the facility to pre-heat the deposition source gases. The physical and electronic properties of a-Si:H deposited at