Investigation of Electrically-active Defects in AIGaN/GaN High Electron Mobility Transistors by Spatially-resolved Spectroscopic Scanned Probe Techniques
Download or Read eBook Investigation of Electrically-active Defects in AIGaN/GaN High Electron Mobility Transistors by Spatially-resolved Spectroscopic Scanned Probe Techniques PDF written by Drew Cardwell and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle.
Author | : Drew Cardwell |
Publisher | : |
Total Pages | : |
Release | : 2013 |
ISBN-10 | : OCLC:875559848 |
ISBN-13 | : |
Rating | : 4/5 (48 Downloads) |
Book Synopsis Investigation of Electrically-active Defects in AIGaN/GaN High Electron Mobility Transistors by Spatially-resolved Spectroscopic Scanned Probe Techniques by : Drew Cardwell
Book excerpt: The nm-scale trap spectroscopy techniques were used to spatially resolve particular traps in AlGaN/GaN HEMTs grown by metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Typically, deeper traps were observed in the AlGaN barrier layer, within several hundred nanometers of the gate edge in the drain access region, in both MOCVD and MBE-grown HEMTs. Measurements on MOCVD-grown HEMTs with Fe-doped GaN buffer layers indicated that an Ec - 0.57 eV trap is located in the GaN buffer layer and is correlated with the presence of Fe in the GaN buffer.