Impact of Electrically and Thermally Induced Physical Defects on the Reliability of AlGaN/GaN High Electron Mobility Transistors
Author | : Monta Raymond Holzworth (Jr) |
Publisher | : |
Total Pages | : 192 |
Release | : 2013 |
ISBN-10 | : OCLC:885200160 |
ISBN-13 | : |
Rating | : 4/5 (60 Downloads) |
Book excerpt: AlGaN/GaN high electron mobility transistors are unique for their combination of high temperature, high power, and high frequency applications. Compared to Si, Ge, and compound semiconductors such as GaAS and InP, AlGaN/GaN transistors outclass the current technology due to their superior combination of high breakdown voltage and high frequency performance. These characteristics arise from structural and electrical properties inherent to the AlGaN/GaN heterojunction which have enabled AlGaN/GaN transistors usage in important military and civilian applications such as microwave and millimeter technology, RADAR systems, and as high current and voltage switches in utility grid systems. As the technology continues to improve due to increased materials quality and device advancements, future applications will require AlGaN/GaN transistor usage under even higher voltages and temperatures. Therefore, the effects of these stresses need to be investigated in order improve device performance and reliability.