Electronic Transport Processes in Refractory Metal Silicides
Author | : J. E. Mahan |
Publisher | : |
Total Pages | : 25 |
Release | : 1984 |
ISBN-10 | : OCLC:227626616 |
ISBN-13 | : |
Rating | : 4/5 (16 Downloads) |
Book excerpt: The electronic transport properties of TiSi2, TaSi2, MoSi2, and WSi2 thin films were investigated. The films were prepared by neutralized ion beam sputtering of the metals onto silicon surfaces, followed by furnace reaction in an inert atmosphere to form the disilicide film. X-ray diffraction and Auger analysis indicate that single-phase disilicide films were obtained, with no detectable impurity content. The residual and intrinsic resistivity components were determined. Hall effect and magnetoresistance measurements were made to determine the dominant carrier type and obtain representative mobility estimates. It was found that multicarrier effects prevail in all of the materials. (Author).