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Language: en
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Pages: 404
Type: BOOK - Published: 2019-11-05 - Publisher: World Scientific
This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and
Language: en
Pages: 576
Pages: 576
Type: BOOK - Published: 2012-12-06 - Publisher: Springer Science & Business Media
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energ
Language: en
Pages: 498
Pages: 498
Type: BOOK - Published: 2016-03-30 - Publisher: Springer
This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materi
Language: en
Pages: 494
Pages: 494
Type: BOOK - Published: 2012-12-06 - Publisher: Springer Science & Business Media
Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chap
Language: en
Pages: 605
Pages: 605
Type: BOOK - Published: 2012-12-06 - Publisher: Springer Science & Business Media
The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower pow