CMOS Millimeter-wave Receiver Front-end Circuits and Their Applications
Author | : Ning Zhang |
Publisher | : |
Total Pages | : |
Release | : 2009 |
ISBN-10 | : OCLC:489094632 |
ISBN-13 | : |
Rating | : 4/5 (32 Downloads) |
Book excerpt: ABSTRACT: The improvement of high frequency capability for silicon devices has made implementation of millimeter-wave (mm-wave) silicon integrated circuits operating at 60 GHz, 77 GHz and even higher feasible. This had led to the proposal of a low-cost 77-GHz CMOS transceiver for automobile radar application and a 60-GHz wireless inter-chip interconnect system. This Ph. D work demonstrated an 80-GHz mm-wave receiver chain integrated with a frequency synthesizer fabricated using low leakage transistors of a low cost 65-nm bulk CMOS technology. An 80-GHz single-ended low noise amplifier (LNA), a 77-GHz down-conversion mixer and a 94-GHz voltage-controlled oscillator (VCO) have been separately demonstrated. A 1.2-V supply, the single-ended LNA exhibits 12-dB gain and 9-dB noise figure (NF) consuming 32- mW power. The mixer has -8-dB conversion gain and 17 dB NF while consuming only 6-mW power. With a 1.5 V supply, the VCO achieves 5.8% tuning range around 94 GHz and - 87dBc/Hz phase noise at 1 MHz offset while consuming 14-mW power. These designs demonstrate that the low-cost, low leakage CMOS process can be used for the design of mmwave circuit blocks and potentially larger integrated system despite the challenges of using the technology such as low voltage headroom, moderate metallization performance and strict metal density filling requirements.