Characterization and Reliability of AlGaN/GaN High Electron Mobility Transistors
Author | : Erica Ann Douglas |
Publisher | : |
Total Pages | : |
Release | : 2011 |
ISBN-10 | : OCLC:818755258 |
ISBN-13 | : |
Rating | : 4/5 (58 Downloads) |
Book excerpt: High reverse bias of the gate has been shown to induce the inverse piezoelectric effect, resulting in a sharp increase in gate leakage current due to crack formation. The introduction of elevated temperatures during high reverse gate bias indicated that device failure is due to the breakdown of an unintentional gate oxide. RF stress of AlGaN/GaN HEMTs showed comparable critical voltage breakdown regime as that of similar devices stressed under dc conditions. Though RF device characteristics showed stability up to a drain bias of 20 V, Schottky diode characteristics degraded substantially at all voltages investigated. Results from both dc and RF stress conditions, under several bias regimes, confirm that the primary root for stress induced degradation was due to the Schottky contact.