Ammonia Molecular Beam Epitaxy of (Al, Ga)N for AlGaN/GaN High Electron Mobility Transistors
Author | : Andrea Corrion |
Publisher | : |
Total Pages | : 400 |
Release | : 2008 |
ISBN-10 | : 0549842241 |
ISBN-13 | : 9780549842248 |
Rating | : 4/5 (41 Downloads) |
Book excerpt: In this work, the growth of (Al, Ga)N on GaN and SiC substrates by ammonia MBE was investigated. Fundamental growth processes involved in ammonia MBE of GaN(0001) were studied using homoepitaxy, and growth regimes relevant for electronic devices were identified and summarized on a growth diagram. Reduced threading dislocation density GaN buffer layers were developed on SiC substrates for use in AlGaN/GaN HEMTs, and transistor structures were processed and measured at microwave frequencies. Excellent power performance was achieved: 11.1 W/mm output power and power-added efficiencies of greater than 70% at 10 GHz, as well as 7.9 W/mm output power at 30 GHz. These results represent the highest output power and the first mm-wave power performance yet reported for AlGaN/GaN HEMTs grown by ammonia MBE and demonstrate the potential of this growth technique for electronic devices.