Advanced Large-Signal Modeling of GaN-HEMTs
Author | : M. Berroth |
Publisher | : |
Total Pages | : 9 |
Release | : 2002 |
ISBN-10 | : OCLC:74294549 |
ISBN-13 | : |
Rating | : 4/5 (49 Downloads) |
Book excerpt: For improved non-linear modeling of AlGaN/GaN high electron mobility transistors, a large- signal model originally developed for GaAs-based devices has been extended by introduction of a thermal sub-circuit to account for self-heating. Thereby, DC output characteristics which typically show negative output conductance at a high dissipating power level are well reproduced. Since self-heating also effects the transconductance, which is related to S(sub 21 at RF conditions, the comparison of broadband S-parameter simulations and measurements revealed significant improvement when using the extended model. First experimental and theoretical investigations on the transient behavior at pulsed conditions are finally presented.