N-face GaN-based Materials and Microwave Transistors by Plasma-assisted Molecular Beam Epitaxy
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Author | : Man Hoi Wong |
Publisher | : |
Total Pages | : 264 |
Release | : 2009 |
ISBN-10 | : 1109483732 |
ISBN-13 | : 9781109483734 |
Rating | : 4/5 (32 Downloads) |
Book Synopsis N-face GaN-based Materials and Microwave Transistors by Plasma-assisted Molecular Beam Epitaxy by : Man Hoi Wong
Book excerpt: This thesis investigates the use of N-face GaN-based heterostructures as a promising approach to overcome performance limitations commonly encountered in Ga-face AlGaN/GaN high electron mobility transistors (HEMTs) as their frequency of operation extends into the millimeter-wave and beyond. N-face (000 1) GaN, with its reversed direction of polarization compared to that of the Ga-face (0001), are well-suited for designing new device structures that address the problems of poor electron confinement and high ohmic contact resistance in highly-scaled GaN transistors. Plasma-assisted molecular beam epitaxy (PAMBE) was the crystal growth technique employed in this research.