Metal-organic Chemical Vapor Deposition of Indium Oxide Based Transparent Conducting Oxide Thin Films
Author | : Jun Ni |
Publisher | : |
Total Pages | : |
Release | : 2005 |
ISBN-10 | : OCLC:61323080 |
ISBN-13 | : |
Rating | : 4/5 (80 Downloads) |
Book excerpt: Four novel diamine adducts of bis(hexafluoroacetylacetonato)zinc [Zn(hfa)2·(diamine)] can be synthesized in a single step reaction. Single crystal x-ray diffraction studies reveal monomeric, six-coordinate structures. The thermal stabilities and vapor phase transport properties of these complexes are considerably greater than those of conventional solid/liquid zinc metal-organic chemical vapor deposition (MOCVD) precursors. Of the four complexes, bis(1,1,1,5,5,5-hexafluoro-2,4-pentadionato)(N,N '-diethylethylenediamine)zinc [Zn(hfa)2 ( N,N'-DEA)], is particularly effective in the growth of thin films of the transparent conducting oxide Zn- and Sn-doped In2O3 (ZITO) due to its superior volatility and low melting point of 64°C.