Investigation of Electrically Active Defects in GaN, AlGaN, and AlGaN/GaN High Electron Mobility Transistors
Download or Read eBook Investigation of Electrically Active Defects in GaN, AlGaN, and AlGaN/GaN High Electron Mobility Transistors PDF written by Aaron R. Arehart and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle.
Author | : Aaron R. Arehart |
Publisher | : |
Total Pages | : |
Release | : 2009 |
ISBN-10 | : OCLC:679689722 |
ISBN-13 | : |
Rating | : 4/5 (22 Downloads) |
Book Synopsis Investigation of Electrically Active Defects in GaN, AlGaN, and AlGaN/GaN High Electron Mobility Transistors by : Aaron R. Arehart
Book excerpt: To further refine the capabilities to quantitativelymeasure defect energies and concentrations in the access regions of HEMTs, an atomic forcemicroscope is adapted to perform nanometer-scale defect characterization. Using scanning Kelvin probe microscopy, evidence of the spatial and time-dependent measurement capabilities is demonstrated. Initial HEMT results are presented and suggest the total trap concentration of ~1012 cm−2 consistent with previous results.