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Language: en
Pages: 192
Pages: 192
Type: BOOK - Published: 2013 - Publisher:
AlGaN/GaN high electron mobility transistors are unique for their combination of high temperature, high power, and high frequency applications. Compared to Si,
Language: en
Pages: 244
Pages: 244
Type: BOOK - Published: 2012 - Publisher:
Language: en
Pages: 130
Pages: 130
Type: BOOK - Published: 2019-05-31 - Publisher:
Abstract: GaN based devices have reached a point in terms of processing maturity where the favorable wide-band gap related properties can be implemented in seve
Language: en
Pages:
Pages:
Type: BOOK - Published: 2011 - Publisher:
High reverse bias of the gate has been shown to induce the inverse piezoelectric effect, resulting in a sharp increase in gate leakage current due to crack form
Language: en
Pages: 0
Pages: 0
Type: BOOK - Published: 2012-10-25 - Publisher: Cuvillier
AlGaN/GaN HEMTs reliability and stability issues were investigated in dependence on epitaxial design and process modification. DC-Step-Stress-Tests have been pe