High-Density Plasma-Enhanced Chemical Vapor Deposition of Si-Based Materials for Solar Cell Applications
Author | : H. P. Zhou |
Publisher | : |
Total Pages | : |
Release | : 2016 |
ISBN-10 | : OCLC:1154236137 |
ISBN-13 | : |
Rating | : 4/5 (37 Downloads) |
Book excerpt: High-quality and low-cost fabrication of Si-based materials, in which many fundamental and technology problems still remain, have attracted tremendous interests due to their wide applications in solar cell area. Low-frequency inductively coupled plasma (LFICP) provides a new and competitive solution, thanks to its inherent advantages of high-density plasma, low sheath potential, and low electron temperature, et cetera The plasma characteristic-dependent microstructures, optical and electronic properties of the LFICP CVD-based hydrogenated amorphous/microcrystalline silicon and silicon oxides are systematically studied. Remote-LFICP combing the high-density plasma nature of ICP and mild ion bombardment on growing surface in remote plasma allows the deposition of high-quality Si-based materials providing excellent c-Si surface passivation. The mechanism of surface passivation by LFICP CVD Si-based materials, interaction between plasma species and growing surface are analyzed in terms of the plasma properties. These results pave the way for LFICP CVD utilization in Si-based high-efficiency and low-cost solar cell fabrication.