Defect-Induced Magnetism in Oxide Semiconductors

Book excerpt: Defect-Induced Magnetism in Oxide Semiconductors provides an overview of the latest advances in defect engineering to create new magnetic materials and enable new technological applications. First, the book introduces the mechanisms, behavior, and theory of magnetism in oxide semiconductors and reviews the methods of inducing magnetism in these materials. Then, strategies such as pulsed laser deposition and RF sputtering to grow oxide nanostructured materials with induced magnetism are discussed. This is followed by a review of the most relevant postdeposition methods to induce magnetism in oxide semiconductors including annealing, ion irradiation, and ion implantation. Examples of defect-induced magnetism in oxide semiconductors are provided along with selected applications. This book is a suitable reference for academic researchers and practitioners and for people engaged in research and development in the disciplines of materials science and engineering. - Reviews the magnetic, electrical, dielectric and optical properties of oxide semiconductors with defect-induced magnetism - Discusses growth and post-deposition strategies to grow oxide nanostructured materials such as oxide thin films with defect-induced magnetism - Provides examples of materials with defect-induced magnetism such as zinc oxide, cerium dioxide, hafnium dioxide, and more