Comparative Study of Low-temperature PECVD of Amorphous Silicon Using Mono-, Di-, Trisilane and Cyclohexasilane
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Author | : |
Publisher | : |
Total Pages | : |
Release | : 2009 |
ISBN-10 | : OCLC:1065925735 |
ISBN-13 | : |
Rating | : 4/5 (35 Downloads) |
Book Synopsis Comparative Study of Low-temperature PECVD of Amorphous Silicon Using Mono-, Di-, Trisilane and Cyclohexasilane by :
Book excerpt: The hydrogenated amorphous silicon a-Si:H films were grown by plasma-enhanced chemical vapor deposition (PECVD) using liquid cyclohexasilane Si6H12 (CHS). The growth rate of a-Si:H was studied as a function of substrate temperatures in the range of 30 C