Selected Energy Epitaxial Deposition (SEED) and Low Energy Electron Microscopy (LEEM) of AlN, GaN and SiC Thin Films
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Author | : |
Publisher | : |
Total Pages | : 9 |
Release | : 1999 |
ISBN-10 | : OCLC:227913014 |
ISBN-13 | : |
Rating | : 4/5 (14 Downloads) |
Book Synopsis Selected Energy Epitaxial Deposition (SEED) and Low Energy Electron Microscopy (LEEM) of AlN, GaN and SiC Thin Films by :
Book excerpt: The report objectives are: * Optimize low-temperature growth of GaN using seeded supersonic molecular beams of NH3 and triethylgallium (TEG). * Determine the optimum growth parameters by conducting in situ real-time observations of the heteroepitaxial growth of GaN(0001) on 6H-SiC(0001) substrates using the SSJ source seeded with NH3 with the low-energy electron microscope (LEEM). * Investigate effects of precursor translational energy on growth kinetics and morphology of GaN films.