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Language: en
Pages: 310
Pages: 310
Type: BOOK - Published: 1988 - Publisher:
Language: en
Pages: 198
Pages: 198
Type: BOOK - Published: 1989 - Publisher:
Language: en
Pages: 104
Pages: 104
Type: BOOK - Published: 1990 - Publisher:
Split and normal gate A1GaAs /GaAs MODFETs were fabricated along with the ohmic test structures and the Hall bar geometries. The DC characteristics of normal ga
Language: en
Pages: 246
Pages: 246
Type: BOOK - Published: 1987 - Publisher:
Enhanced Schottky-barrier In(0.15)Ga(0.85)As/A1xGa(1-x)As pseudomorphic modulation-doped field-effect transistors (MODFETs) were fabricated with 1.2 micron gate
Language: en
Pages: 544
Pages: 544
Type: BOOK - Published: 1991 - Publisher: Institute of Electrical & Electronics Engineers(IEEE)