Related Books
Language: en
Pages: 175
Pages: 175
Type: BOOK - Published: 2011 - Publisher:
In this work a scaling approach is studied to develop a transistor technology which achieves a high gain as well as a high output power at W-band frequencies an
Language: en
Pages: 183
Pages: 183
Type: BOOK - Published: 2011 - Publisher:
In spite of the great progress in performance achieved during the last few years, GaN high electron mobility transistors (HEMTs) still have several important is
Language: en
Pages: 264
Pages: 264
Type: BOOK - Published: 2009 - Publisher:
This thesis investigates the use of N-face GaN-based heterostructures as a promising approach to overcome performance limitations commonly encountered in Ga-fac
Language: en
Pages: 128
Pages: 128
Type: BOOK - Published: 2010-10 - Publisher: LAP Lambert Academic Publishing
High electron mobility transistor (HEMT) made of compound semiconductors exhibit great potential for high-power applications at RF, microwave, and millimeter-wa
Language: en
Pages: 434
Pages: 434
Type: BOOK - Published: 2019-05-14 - Publisher: CRC Press
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and o